ROHM Semiconductor
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443 回視聴 ・ 6いいね ・ 2024/06/14
At ROHM Semiconductor, we've made significant strides in GaN technology. Our pioneering 150V GaN HEMTs with an 8V gate breakdown voltage, introduced in 2022, and subsequent advancements in control IC technology in March 2023, showcase our commitment to pushing the boundaries of GaN performance. Our latest offering includes the groundbreaking 650V GaN HEMTs, setting new benchmarks in performance, fostering heightened efficiency, and facilitating compact designs across a broad spectrum of power supply systems.
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