EE Journal
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3.2万 回視聴 ・ 139いいね ・ 2024/12/12
December 12, 2024 -- In this episode of Chalk Talk, Zobair Roohani from Infineon and Amelia Dalton explore the fundamentals and characteristics of wide band gap materials. They also investigate why the higher band gap and higher electric field withstanding capability of GaN brings us closer toward that ideal switching technology and the unique design challenges one must pay attention to when driving GaN devices.
More information about Infineon Technologies 700V CoolGaN™ Power Transistors: bit.ly/49DR0cf
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Choosing between GaN, SiC, and traditional Si in your Power Switch Topology -- Infineon and Mouser
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Choosing between GaN, SiC, and traditional Si in your Power Switch Topology -- Infineon and Mouser
3.3万 回視聴
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